Paper
22 December 1998 Critical temperature enhancement by means of substrate-induced pressure
Joel Perret, J. Fompeyrine, Jeongwoo Seo, E. Machler, Oystein Fischer, Piero Martinoli, Jean-Pierre Locquet
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Abstract
In the field of high-temperature superconductivity there has been no increase in the critical temperature Tc of bulk compounds since 1993. However, an analysis of the uniaxial strain or pressure derivatives of Tc in the cuprate superconductors allows us to predict that under a compressive epitaxial strain, a large increase of Tc should be possible. We demonstrate the experimental feasibility of this approach for La2-xSrxCuO4+/- (delta ) ('214') thin films deposited on (001)-oriented SrLaAlO4 substrates for different Sr content (0.045 less than or equal to x less than or equal to 0.11). Under epitaxial strain, a large jump of the critical temperature Tc is observed, as well as a drastic change in the resistive behavior from insulating to metallic at low temperatures.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joel Perret, J. Fompeyrine, Jeongwoo Seo, E. Machler, Oystein Fischer, Piero Martinoli, and Jean-Pierre Locquet "Critical temperature enhancement by means of substrate-induced pressure", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335902
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Cited by 2 scholarly publications.
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KEYWORDS
Thin films

Strontium

Superconductors

Oxygen

Thin film growth

Superconductivity

Thin film deposition

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