Fermi surface features and charge segregation in Bi2212 superconductor

N. L. Saini; A. Lanzara; Antonio Bianconi; J. Avila; M. C. Asensio; Setsuko Tajima; G. D. Gu; N. Koshizuka

doi:10.1117/12.335880

22 December 1998 Fermi surface features and charge segregation in Bi2212 superconductor

N. L. Saini, A. Lanzara, Antonio Bianconi, J. Avila, M. C. Asensio, Setsuko Tajima, G. D. Gu, N. Koshizuka

Proceedings Volume 3481, Superconducting and Related Oxides: Physics and Nanoengineering III; (1998) https://doi.org/10.1117/12.335880
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Experiments are enlightening that the high T_c superconductivity in cuprate perovskites takes place in a particular phase showing segregation of localized and itinerant charge carriers. We have studied topological features of the Fermi surface of Bi₂Sr₂CaCu₂O₈+d (Bi2212) superconductor to investigate implication of charge segregation in the system. For the purpose we have used constant initial state angle-scanning photoemission supported by the energy distribution curves. The resulting Fermi surface measured over an extended Brillouin zone shows broken segments with partial gaps around ((pi) ,O) and shadow bands around (0.5(pi) ,0.5(pi) ) and equivalent locations. In addition data provide an evidence for new electronic states at the Fermi surface due to a one dimensional band with a small dispersion and small k_F along the ((pi) ,O) direction. We argue that the depression of photointensity around ((pi) ,O) and equivalent locations with well-defined k_F and one dimensional band are related with charge ordering in the CuO₂ plane along the (-(pi) ,(pi) ) direction and spin fluctuations along the ((pi) ,O) direction.

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N. L. Saini, A. Lanzara, Antonio Bianconi, J. Avila, M. C. Asensio, Setsuko Tajima, G. D. Gu, and N. Koshizuka "Fermi surface features and charge segregation in Bi2212 superconductor", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335880

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