Paper
22 December 1998 Microstructural investigation of La1.9Sr0.1CuO4 thin films grown by MBE
Jeongwoo Seo, Joel Perret, J. Fompeyrine, Gustaaf Van Tendeloo, Jean-Pierre Locquet
Author Affiliations +
Abstract
The microstructure of La1.9Sr0.1CuO4 thin films grown by molecular beam epitaxy on SrLaAlO4 and SrTiO3 is investigated by transmission electron microscopy. Using SrLaAlO4 as substrate material, compressive strain is induced, which leads to a drastic increase of Tc. In contrast, SrTiO3 yields a tensile strain and a decrease of Tc. The film on SrLaAlO4 has a low defect density. Only misfit dislocations with an average spacing of 200 nm are found, which are more or less irregularly distributed. For SrTiO3, a periodic array of misfit dislocations is present with an average distance of 16 nm. At the interface, as derived from the comparison with simulated images, (LaSr)2CuAlO6-x and (LaSr)TiO3-x are formed on SrLaAlO4 and SrTiO3, respectively. These intermediate layers are found to increase the corresponding compressive and tensile strain further. The lattice deformation is determined based on lattice-image analysis. Here, the distance of CuO2 planes can be measured locally. It turns out that applying a compressive or tensile strain increases or decreases the distance between CuO2 planes. Accordingly, direct evidence is presented that a decoupling of CuO2 planes leads to an increase of Tc, which is in contradiction to recent theoretical predictions.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeongwoo Seo, Joel Perret, J. Fompeyrine, Gustaaf Van Tendeloo, and Jean-Pierre Locquet "Microstructural investigation of La1.9Sr0.1CuO4 thin films grown by MBE", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335901
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KEYWORDS
Interfaces

Thin films

Thin film growth

Transmission electron microscopy

Aluminum

Copper

Diffraction

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