Paper
22 December 1998 Microstructural investigation of La2Ti2O7 thin films grown by MBE
Jeongwoo Seo, J. Fompeyrine, Jean-Pierre Locquet
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Abstract
In the La-Ti-O system many phases with different structures exist depending on the actual oxygen content. Starting from LaTiO3, which has an orthorhombic unit cell, to the monoclinic La2Ti2O7 structure, first semiconducting, then metallic and finally ferroelectric characteristics can be obtained at room temperature. Recent transmission electron microscopy studies of the bulk materials showed that the transformation of the LaTiO3 structure to La2Ti2O7 is based on the insertion of an additional oxygen plane in the {110} perovskite planes. A controlled insertion of this oxygen plane would allow heterostructures to be grown that exhibit different physical properties but have perfect chemical compatibility. Here, we report on our results of epitaxially grown thin films of La2Ti2O7 on (110)-oriented SrTiO3 and LaAlO3 substrates using sequential deposition of La and Ti under a beam of atomic oxygen. The epitaxial behavior and the microstructural properties of these films were investigated by transmission electron microscopy.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeongwoo Seo, J. Fompeyrine, and Jean-Pierre Locquet "Microstructural investigation of La2Ti2O7 thin films grown by MBE", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335903
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Cited by 5 scholarly publications.
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KEYWORDS
Oxygen

Thin films

Transmission electron microscopy

Lanthanum

Interfaces

Thin film growth

Perovskite

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