Integration of hydrogen silsesquioxane into an advanced BiCMOS process

Michael Olewine; Ralph N. Wall; Gus J. Colovos

doi:10.1117/12.324032

4 September 1998 Integration of hydrogen silsesquioxane into an advanced BiCMOS process

Michael Olewine, Ralph N. Wall, Gus J. Colovos

Proceedings Volume 3508, Multilevel Interconnect Technology II; (1998) https://doi.org/10.1117/12.324032
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Performance of advanced integrated circuit (IC) technology is becoming dominated by interconnect RC propagation delays making the introduction of lower capacitance insulators very attractive. The use of low dielectric constant (low-k) materials will be a key challenge for future interconnect technologies. In the case of BiCMOS technology for RF applications, an additional consideration is to minimize parasitic capacitance of passive components such as inductors, buses, and bond pads. The use of hydrogen silsesquioxane (HSQ) with a dielectric constant of about 3.0 allowed the construction of high quality spiral inductors in a 0.5 micrometer BiCMOS technology. In addition to its low-k properties, the HSQ spin-on dielectric was used for planarization of three polycrystalline silicon layers and four levels of metal interconnects. The HSQ layer was applied in a single coat application in a non-etchback process that achieved excellent planarity with good crack resistance. The stability of blanket HSQ films was shown using FTIR spectra, film stress, and capacitance data. Immunity of devices to hot carrier lifetime degradation was demonstrated. Low resistance and high yield for long metal via chains were obtained by careful integration of the via etch, resist strip and metal deposition processes. Thus we demonstrated the integration of HSQ planarization into an advanced BiCMOS process to take advantage of its excellent planarity and its low dielectric constant.

Citation Download Citation

Michael Olewine, Ralph N. Wall, and Gus J. Colovos "Integration of hydrogen silsesquioxane into an advanced BiCMOS process", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); https://doi.org/10.1117/12.324032

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available