Introduction to 300-mm/0.18-um to 0.13-um clean CMP system

Manabu Tsujimura

doi:10.1117/12.324030

4 September 1998 Introduction to 300-mm/0.18-μm to 0.13-μm clean CMP system

Manabu Tsujimura

Proceedings Volume 3508, Multilevel Interconnect Technology II; (1998) https://doi.org/10.1117/12.324030
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

CMP, which has been accepted by users mainly as oxide planarization process of ILD in 200 mm/0.25 (mu) design rule, will be applied in 300 mm/0.18 (mu) - 0.13 (mu) design rule. Big features in this new stage are that in mechanical wise 'dry-in dry-out concept' is fully adopted and in process wise, various applications such as STI, metal damascene with Cu, low K materials etc. will be introduced. Accordingly, CMP is not anymore special process and higher performances like other dry processes will be required. The present situation and future points are herein reported.

Citation Download Citation

Manabu Tsujimura "Introduction to 300-mm/0.18-μm to 0.13-μm clean CMP system", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); https://doi.org/10.1117/12.324030

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available