Paper
21 December 1998 Dynamics of grating growth in GeB-doped fiber
Author Affiliations +
Proceedings Volume 3542, Doped Fiber Devices II; (1998) https://doi.org/10.1117/12.333759
Event: Photonics East (ISAM, VVDC, IEMB), 1998, Boston, MA, United States
Abstract
The dynamics of grating growth in both H2-loaded and non-H2-loaded GeB-doped fiber is investigated with cw 244 nm light and pulsed 266 nm light. The growth function is found to be the same in both cases, and both the growth rate and the saturation levels are proportional to the writing power density. Such a dynamics can be explained by a two- photon defect creation mechanism counterbalanced by a one- photon destruction mechanism, the saturation level being determined not by depletion of available defects, but by an equilibrium between the two mechanisms. We discuss the implications of such a model.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francois Ouellette "Dynamics of grating growth in GeB-doped fiber", Proc. SPIE 3542, Doped Fiber Devices II, (21 December 1998); https://doi.org/10.1117/12.333759
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KEYWORDS
Refractive index

Ultraviolet radiation

Argon ion lasers

Pulsed laser operation

Absorption

Continuous wave operation

Luminescence

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