Paper
12 August 1998 Deep finlike AlGaAs nanostructure fabricated by CAIBE
Sheng Li Wu, Lijun Wang, Richard C. Tiberio, Seng Tiong Ho
Author Affiliations +
Abstract
We show that very narrow fin-like periodic nanostructure with 0.1 micrometer width, 1 micrometer depth, and a few microns length can be fabricated on AlGaAs using Chemically-Assisted- Ion-Beam-Etching with oxidized AlGaAs as negative mask. This technique may have applications to nanoscale devices fabrication.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sheng Li Wu, Lijun Wang, Richard C. Tiberio, and Seng Tiong Ho "Deep finlike AlGaAs nanostructure fabricated by CAIBE", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.318000
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KEYWORDS
Waveguides

Photomasks

Nanolithography

Nanostructures

Polymethylmethacrylate

Semiconducting wafers

Photoresist materials

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