Polycrystalline silicon porous silicon field emitter

Weibiao Wang; Changchun Jin; Jinxiu Jiang; Haifeng Zhao; Xiwu Fan

doi:10.1117/12.319664

18 August 1998 Polycrystalline silicon porous silicon field emitter

Weibiao Wang, Changchun Jin, Jinxiu Jiang, Haifeng Zhao, Xiwu Fan

Proceedings Volume 3560, Display Devices and Systems II; (1998) https://doi.org/10.1117/12.319664
Event: Photonics China '98, 1998, Beijing, China

Abstract

In this research, we applied the physical and chemical characteristics of porous polysilicon to field emission. Porous polysilicon field emitter was fabricated by anodized, oxide, et al technology. Au film about 10 mm thickness as grid was used in device. Electron's emission property of device was measured in ultrahigh vacuum chamber. Also, the oxide time as effect factor to emission property was studied.

Citation Download Citation

Weibiao Wang, Changchun Jin, Jinxiu Jiang, Haifeng Zhao, and Xiwu Fan "Polycrystalline silicon porous silicon field emitter", Proc. SPIE 3560, Display Devices and Systems II, (18 August 1998); https://doi.org/10.1117/12.319664

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