Gallium-nitride-based LEDs on silicon substrates

Nestor A. Bojarczuk; Supratik Guha

doi:10.1117/12.344486

14 April 1999 Gallium-nitride-based LEDs on silicon substrates

Nestor A. Bojarczuk, Supratik Guha

Proceedings Volume 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III; (1999) https://doi.org/10.1117/12.344486
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We describe the growth and characteristics of GaN based light emitting diodes grown on Si(111) substrates. We show that the UV electroluminescence of such diodes can be used to generate fluorescence in organic color converters so that multicolored hybrid nitride-organic light emitting diodes that emit in the visible can be prepared.

Citation Download Citation

Nestor A. Bojarczuk and Supratik Guha "Gallium-nitride-based LEDs on silicon substrates", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); https://doi.org/10.1117/12.344486

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