Paper
14 April 1999 Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale-production MOCVD reactors
Chuong A. Tran, Robert F. Karlicek Jr., Michael G. Brown, Ivan Eliashevich, Alexander Gurary, Richard A. Stall
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Abstract
As more advances are made in the performance of GaN-based devices, a trend toward the use of large scale MOCVD reactors for epitaxial growth of GaN-based device structures is clear. In this paper we describe the use of Emcore's SpectraBlueTM reactor for large-scale manufacturing of Blue and Green LEDs. The high throughput growth of GaN based LEDs is demonstrated without compromising LED uniformity or overall performance. In-situ control of key parameters critical to the production of high quality LEDs, such as buffer layer growth is now feasible using in-situ reflectance spectroscopy. Film properties as well as LED device performance are discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chuong A. Tran, Robert F. Karlicek Jr., Michael G. Brown, Ivan Eliashevich, Alexander Gurary, and Richard A. Stall "Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale-production MOCVD reactors", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); https://doi.org/10.1117/12.344487
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KEYWORDS
Indium

Light emitting diodes

Indium gallium nitride

Gallium nitride

Semiconducting wafers

Metalorganic chemical vapor deposition

Green light emitting diodes

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