Growth of InGaAlP HB-LEDs in a large-scale-production reactor

Sherman Li; D. A. Collins; S. Vatanapradit; M. Ferreira; Peter A. Zawadzki; Richard A. Stall; Ivan Eliashevich; J. E. Nering

doi:10.1117/12.344469

14 April 1999 Growth of InGaAlP HB-LEDs in a large-scale-production reactor

Sherman Li, D. A. Collins, S. Vatanapradit, M. Ferreira, Peter A. Zawadzki, Richard A. Stall, Ivan Eliashevich, J. E. Nering

Author Affiliations +

Proceedings Volume 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III; (1999) https://doi.org/10.1117/12.344469
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The theory, structure, and current manufacturing technologies for InGaAlP high brightness light emitting diodes (HB-LED) emitting in the range of 650 to 585 nm are described in this paper. A state-of-the-art HB-LED MOCVD reactor designed for high volume manufacturing (42 - 2' or 16 - 3' wafers) is demonstrated. Data for thickness and compositional uniformity and reproducibility are presented showing the material quality and reactor stability that can currently be achieved. In addition, device data for InGaAlP HB-LEDs is reported, including brightness, forward voltage, and emission wavelength with excellent intra and inter wafer uniformity and run-to-run reproducibility.

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Sherman Li, D. A. Collins, S. Vatanapradit, M. Ferreira, Peter A. Zawadzki, Richard A. Stall, Ivan Eliashevich, and J. E. Nering "Growth of InGaAlP HB-LEDs in a large-scale-production reactor", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); https://doi.org/10.1117/12.344469

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