Paper
1 April 1999 Strip-loaded structure for ion-exchanged Er3+-doped glass waveguide amplifiers
Gualtiero Nunzi Conti, Pekka Ayras, C. Cavaliere, Bor-Chyuan Hwang, Tao Luo, Juha T. Rantala, Shibin Jiang, Seppo Honkanen, Nasser Peyghambarian
Author Affiliations +
Abstract
A new strip-loaded structure for ion-exchanged waveguide amplifiers in Er3+-doped glass is suggested. The fabrication of these waveguides lacks steps such as mask deposition and burial process that can be critical for some glasses. A simple numerical modeling shows that similar, or even higher, gain values as in ion-exchanged buried waveguides can be achieved. Preliminary experimental data for the fabrication of the strip-loaded structure are also reported.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gualtiero Nunzi Conti, Pekka Ayras, C. Cavaliere, Bor-Chyuan Hwang, Tao Luo, Juha T. Rantala, Shibin Jiang, Seppo Honkanen, and Nasser Peyghambarian "Strip-loaded structure for ion-exchanged Er3+-doped glass waveguide amplifiers", Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); https://doi.org/10.1117/12.344501
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Cited by 1 scholarly publication.
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KEYWORDS
Waveguides

Glasses

Sol-gels

Amplifiers

Diffusion

Absorption

Signal attenuation

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