Paper
14 April 1999 Packaging of electrically switchable tunable tapered lasers
Si Hyung Cho, Stephen H. Fox, I. K. Han, Jung-Ho Song, Y. Hu, Zhencan Frank Fan, F. G. Johnson, Dennis Stone, Goetz Erbert, Frank Bugge, Mario Dagenais
Author Affiliations +
Abstract
High power near diffraction limited external cavity semiconductor tapered lasers that use a single-angled-facet input preamplifier are demonstrated for the first time. Four electrodes (three in the preamplifier region and one in the power section) on the device were implemented to investigate the switching contrast ratio of the output laser intensity. More than 1 W CW of power was obtained with a slope efficiency of 0.7 W/A, and close to 20 dB intensity contrast ratio was obtained by switching off two and three electrodes in the input ridge section. Also, more than 50 dB side-mode suppression ratio and 60 nm tuning bandwidth were obtained. These powers were found to be emitted in a near-diffraction- limited beam.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Si Hyung Cho, Stephen H. Fox, I. K. Han, Jung-Ho Song, Y. Hu, Zhencan Frank Fan, F. G. Johnson, Dennis Stone, Goetz Erbert, Frank Bugge, and Mario Dagenais "Packaging of electrically switchable tunable tapered lasers", Proc. SPIE 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV, (14 April 1999); https://doi.org/10.1117/12.345435
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Electrodes

Waveguides

Semiconductor lasers

Switching

Antireflective coatings

Amplifiers

Optical amplifiers

RELATED CONTENT


Back to Top