HgCdTe photodiode passivated with a wide-bandgap epitaxial layer

Jaroslaw Rutkowski; Antoni Rogalski; Krzysztof Adamiec

doi:10.1117/12.344580

7 April 1999 HgCdTe photodiode passivated with a wide-bandgap epitaxial layer

Jaroslaw Rutkowski, Antoni Rogalski, Krzysztof Adamiec

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344580
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The surface passivation is essential for the fabrication of high performance HgCdTe photodiodes, especially for photodiodes with small junction area. The fabrication of the HgCdTe photodiodes passivated with a wide band gap epitaxial layer has been described. The planar double-layer heterojunction (DLHJ) structures used in fabrication Hg_{1- x}Cd_xTe photodiodes were grown on CdZnTe substrates by liquid phase epitaxy (LPE). The P⁺-n long wavelength infrared radiation (LWIR) photodiodes were fabricated by arsenic diffusion into n-type HgCdTe DLHJ structures. To improve the photodiode performance a thickness of n-type base layer was limited. The photodiodes performances were determined from measurements of the current-voltage and spectral response characteristics. The generation- recombination current was found to be dominant current around zero bias voltage at 77 K. The diodes without antireflection coating had a typical quantum efficiency of 60 percent. The performance of both type of p-n LWIR HgCdTe photodiodes (with and without the wide band gap epitaxial layer) have been compared.

Citation Download Citation

Jaroslaw Rutkowski, Antoni Rogalski, and Krzysztof Adamiec "HgCdTe photodiode passivated with a wide-bandgap epitaxial layer", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344580

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