HOYA deep-UV EAPSM blanks development status

Masao Ushida; Hideo Kobayashi

doi:10.1117/12.346216

23 April 1999 HOYA deep-UV EAPSM blanks development status

Masao Ushida, Hideo Kobayashi

Proceedings Volume 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98; (1999) https://doi.org/10.1117/12.346216
Event: 15th European Conference on Mask Technology for Integrated Circuits and Micro-Components, 1998, Munich, Germany

Abstract

Embedded attenuated phase-shift mask (EAPSM) is a feasible one as resolution enhancement technique (RET) for its simple structure and fabrication process. Several properties for the shifter film are required, such as adequate optical constants, a properly low transmittance at defect inspection wavelengths, chemical cleaning durability, DUV exposure durability naturally, as well as film pinhole and particle defect quality level. Several materials had been examined for EAPSM, and some of them are being practically utilized in the industry. We at HOYA also have been researching and developing an optimal material, and have been supplying MoSi-based EAPSM blanks for both i-line and deep UV application. This paper describes EAPSM blanks development history in the industry and the present status of HOYA deep UV EAPSM blanks functionality and quality as well as future improvement and development plan.

Citation Download Citation

Masao Ushida and Hideo Kobayashi "HOYA deep-UV EAPSM blanks development status", Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); https://doi.org/10.1117/12.346216

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