Application of polysilanes for deep-UV antireflective coating

Yasunobu Onishi; Yasuhiko Sato; Eishi Shiobara; Seiro Miyoshi; Hideto Matsuyama; Junko Abe; Hideo Ichinose; Tokuhisa Ohiwa; Yoshihiko Nakano; Sawako Yoshikawa; Shuzi Hayase

doi:10.1117/12.350203

11 June 1999 Application of polysilanes for deep-UV antireflective coating

Yasunobu Onishi, Yasuhiko Sato, Eishi Shiobara, Seiro Miyoshi, Hideto Matsuyama, Junko Abe, Hideo Ichinose, Tokuhisa Ohiwa, Yoshihiko Nakano, Sawako Yoshikawa, Shuzi Hayase

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350203
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Application of polysilanes for a deep UV (DUV) bottom anti- reflective coating (BARC), in order to resolve the problem posed by the insufficient anti-reflection with thin conventional organic BARC applied on transparent dielectric film, is described. The newly developed polysilane anti- reflective coating has the real part of refractive index, n equals 2.00, and the imaginary part, k equals 0.23 at 248 nm. The polysilane coating is immiscible with a chemically amplified photoresist, and is not removable during normal wet development of photoresist. Etching rate of the polysilane is 2 times faster than that of DUV resist during BARC etching, and lower than that of DUV resist during dielectric film etching. The polysilane layer is easily removed by ashing using O2 gas process. Using thick polysilane coating, it can realize both the suppression of the interface reflection between the resist and BARC and good critical dimension control on dielectric film.

Citation Download Citation

Yasunobu Onishi, Yasuhiko Sato, Eishi Shiobara, Seiro Miyoshi, Hideto Matsuyama, Junko Abe, Hideo Ichinose, Tokuhisa Ohiwa, Yoshihiko Nakano, Sawako Yoshikawa, and Shuzi Hayase "Application of polysilanes for deep-UV antireflective coating", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350203

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available