Paper
26 July 1999 Clear-field alternating PSM for 193-nm lithography
Patrick Schiavone, Frederic P. Lalanne, Alain Prola
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Abstract
An alternating phase shift mask for 193m lithography has been generated using a proprietary software tool. The clear field mask allows a single exposure processing. Progressive phase transition is used to avoid the unwanted printing of the 0 degree to 180 degree phase step. A resolution below the exposure wavelength and close to the theoretical limits of the tool could be achieved. 180nm pitch grating could be printed successfully using a numerical aperture of 0.6. This is, to our knowledge the best lithographic performance reported until now using 193nm illumination. However, out of focus imagin shows evidence of a non-negligible phase error. It is shown through atomic force microscopy analysis that the dependence of the etch depth on phase-shifter width can explain this phasers offset. The influence of the quartz etch process on the phase-shift accuracy is proved to be a key issue of the strong PSM manufacturing.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Schiavone, Frederic P. Lalanne, and Alain Prola "Clear-field alternating PSM for 193-nm lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354370
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Cited by 3 scholarly publications.
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KEYWORDS
Photomasks

Etching

Lithography

Quartz

Printing

193nm lithography

Phase shifts

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