Performance characteristics of ultranarrow ArF laser for DUV lithography

Alexander I. Ershov; Herve Besaucele; Palash P. Das

doi:10.1117/12.354308

26 July 1999 Performance characteristics of ultranarrow ArF laser for DUV lithography

Alexander I. Ershov, Herve Besaucele, Palash P. Das

Author Affiliations +

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354308
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Today, commercial line-narrowed ArF lasers for Deep-UV lithography are typically producing spectral bandwidth of 0.6 pm FWHM. This value forces the stepper/scanner manufacturers to use large amount of CaF₂ in the lens design as well as fused silica in order to compensate for chromatic aberrations. We describe in this paper the parameters - such as pulse duration, fluorine concentration and divergence - which influence the line-narrowing efficiency of ArF laser. We are also presenting result obtained using a new optical cavity design using an etalon as output coupler that provides bandwidth of 0.3 pm at FWHM and 0.8 pm for 95 percent of the energy, performance that could allow to greatly reduce the need for CaF₂.

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Alexander I. Ershov, Herve Besaucele, and Palash P. Das "Performance characteristics of ultranarrow ArF laser for DUV lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354308

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