Quantum interference and conductance in silicon quantum wires

Nikolai T. Bagraev; Wolfgang Gehlhoff; Vadim K. Ivanov; Leonid E. Klyachkin; Anna M. Malyarenko; Alexander Naeser; Serguei A. Rykov; Ivan A. Shelykh

doi:10.1117/12.347405

5 May 1999 Quantum interference and conductance in silicon quantum wires

Nikolai T. Bagraev, Wolfgang Gehlhoff, Vadim K. Ivanov, Leonid E. Klyachkin, Anna M. Malyarenko, Alexander Naeser, Serguei A. Rykov, Ivan A. Shelykh

Author Affiliations +

Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347405
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation

Abstract

We present the findings of quantized conductance (QC), Coulomb staircase (CS) and local tunneling spectroscopy (LTS) techniques which reveal the single-hole confinement and charging phenomena in the smooth and modulated quantum wires created electrostatically inside self-assembly longitudinal (SLQW) and lateral (SLaQW) silicon quantum wells. The current- voltage (CV) characteristics obtained are in a good agreement with the data of the theoretical calculations taking account of quantum interference effects in the field-dependent value of the transmission coefficient through the quantum wires that exhibit the different degree of a modulation.

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Nikolai T. Bagraev, Wolfgang Gehlhoff, Vadim K. Ivanov, Leonid E. Klyachkin, Anna M. Malyarenko, Alexander Naeser, Serguei A. Rykov, and Ivan A. Shelykh "Quantum interference and conductance in silicon quantum wires", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); https://doi.org/10.1117/12.347405

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