Direct emissivity measurements of IR materials

Yanina Kisler; Lenn C. Kupferberg; Gordon Mackenzie; Chia Ming Chen

doi:10.1117/12.354636

26 July 1999 Direct emissivity measurements of IR materials

Yanina Kisler, Lenn C. Kupferberg, Gordon Mackenzie, Chia Ming Chen

Proceedings Volume 3705, Window and Dome Technologies and Materials VI; (1999) https://doi.org/10.1117/12.354636
Event: AeroSense '99, 1999, Orlando, FL, United States

Abstract

Emissivity measurements of ZnS, Sapphire, ALON, MgO, and Yttria were performed in 3.9-4.0 micrometers and 4.4-4.9 micrometers bands, for temperatures between 300 degrees C and 600 degrees C. The average radiance was measured over each waveband. Emissivity was calculated as the ratio of the radiance of the sample to that of a black body source at the same temperature. The results of the emissivity measurements for the above-mentioned materials will be reported. Measurement techniques that allowed increasing the dynamic range of the measurement and significantly reducing the noise will be discussed.

Citation Download Citation

Yanina Kisler, Lenn C. Kupferberg, Gordon Mackenzie, and Chia Ming Chen "Direct emissivity measurements of IR materials", Proc. SPIE 3705, Window and Dome Technologies and Materials VI, (26 July 1999); https://doi.org/10.1117/12.354636

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