Electrical conductivity, ESR, and Raman scattering spectroscopy of undoped and B-doped diamond films grown by CVD method

Waclaw Bala; Franciszek Rozploch; L. Falkowski; Slawomir Kulesza; G. Zabik; S. Plachetko; P. Borowski

doi:10.1117/12.344723

8 April 1999 Electrical conductivity, ESR, and Raman scattering spectroscopy of undoped and B-doped diamond films grown by CVD method

Waclaw Bala, Franciszek Rozploch, L. Falkowski, Slawomir Kulesza, G. Zabik, S. Plachetko, P. Borowski

Author Affiliations +

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344723
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

The electrical conductivity, thermally stimulated depolarization current as well as the current-voltage characteristics were measured from 77 K to 350 K. The obtained results are correlated with the Raman scattering spectroscopy and ESR space. In Al-Si-diamond layer-Al structures three (for B-doped diamond layers) or two (for no B-doped diamond layers) TSC peaks in the temperature range between 100 and 300 K are observed. They correspond to trap levels with a thermal activation energy of 0.03 - 0.06 eV, 0.13 - 0.18 eV and 0.6 - 0.65 eV.

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Waclaw Bala, Franciszek Rozploch, L. Falkowski, Slawomir Kulesza, G. Zabik, S. Plachetko, and P. Borowski "Electrical conductivity, ESR, and Raman scattering spectroscopy of undoped and B-doped diamond films grown by CVD method", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344723

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