High-quality LEO growth and characterization of GaN films on Al2O3 and Si substrates

Manijeh Razeghi; Patrick Kung; Danielle Walker; Melissa Hamilton; Jacqueline E. Diaz

doi:10.1117/12.344718

8 April 1999 High-quality LEO growth and characterization of GaN films on Al₂O₃ and Si substrates

Manijeh Razeghi, Patrick Kung, Danielle Walker, Melissa Hamilton, Jacqueline E. Diaz

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344718
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al₂O₃ and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.

Citation Download Citation

Manijeh Razeghi, Patrick Kung, Danielle Walker, Melissa Hamilton, and Jacqueline E. Diaz "High-quality LEO growth and characterization of GaN films on Al₂O₃ and Si substrates", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344718

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