Paper
8 April 1999 Photoreflectance investigations of AlxGa1-xAs/GaAs bandgap dependence on Al content
Piotr Sitarek, Jan Misiewicz, Erling Veje
Author Affiliations +
Abstract
The room temperature photoreflectance spectroscopy (PR) was used to investigate AlxGa1-xAs/GaAs structures. All structures were grown by molecular beam epitaxy technique. The aluminum content changes from x equals 0.11 to x equals 0.53. The alloy composition was determined from X-ray diffraction measurements. The dependence of the direct band gap energy on the Al content was under investigations. To obtain the direct band gap energy, the measured PR spectra were analyzed using Aspnes lineshape procedure. The determined Eg(AlGaAs) dependence on x for doped Al1-xGaxAs layers was compared to previous results.
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Piotr Sitarek, Jan Misiewicz, and Erling Veje "Photoreflectance investigations of AlxGa1-xAs/GaAs bandgap dependence on Al content", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344735
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KEYWORDS
Aluminum

Gallium arsenide

Doping

Molecular beam epitaxy

Spectroscopy

X-ray diffraction

Electroluminescence

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