Paper
8 April 1999 Photoreflectance study of coupling effects in double quantum wells
G. Sek, K. Ryczko, M. Kubisa, Jan Misiewicz, J. Koeth, Alfred W. B. Forchel
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Abstract
A double quantum well molecular beam epitaxy grown GaAs/AlxGa1-xAs structure was studied. To investigate the coupling effects in such a system 1 monolayer thick AlAs barrier was inserted at the center of the GaAs/AlxGa1-xAs single well. Due to the strong coupling between wells each confined state splits into two: symmetric and antisymmetric ones. In the room temperature photoreflectance spectrum features related to transitions between all these states were observed. Theoretical considerations based on the envelope function approximation were performed to obtain the energies of expected optical transitions. An excellent agreement between experiment and theory was obtained.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Sek, K. Ryczko, M. Kubisa, Jan Misiewicz, J. Koeth, and Alfred W. B. Forchel "Photoreflectance study of coupling effects in double quantum wells", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344734
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KEYWORDS
Quantum wells

Gallium arsenide

Excitons

Molecular beam epitaxy

Semiconductors

Spectroscopy

Heterojunctions

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