Paper
8 April 1999 Spectral dependence of GaAlN bandgap-graded UV detector responsivity
Michal Janusz Malachowski
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Abstract
Calculation has been carried out on the responsivity of an AlxGa1-xN(n)-GaN(p) photodiode ultraviolet detector in which the AlxGa1-xN layer has an energy band-gap grading. The analytical solution to the 1D continuity equation was used in the calculations. The spatial dependence of the material properties, such as the absorption coefficient and the energy band-gap of the photodiode n-type laser was included in the solution. The effect of the n-type front layer thickness of the energy band-gap graded photodiodes on the responsivity was analyzed and compared to that of the ungraded photodiodes. Compared to the ungraded photodiodes an enhanced current responsivity was found along with a greatly reduced dependence on the graded layer thickness and on surface recombination rate.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michal Janusz Malachowski "Spectral dependence of GaAlN bandgap-graded UV detector responsivity", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344758
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KEYWORDS
Photodiodes

Gallium nitride

Diffusion

Absorption

Photodetectors

Ultraviolet detectors

Ultraviolet radiation

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