Generation mechanism and reduction methods of post-passivation-etch silklike polymers

Chung-Daw Young; Sen-Fu Chen; Chia-Hsiang Chen

doi:10.1117/12.346243

23 April 1999 Generation mechanism and reduction methods of post-passivation-etch silklike polymers

Chung-Daw Young, Sen-Fu Chen, Chia-Hsiang Chen

Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346243
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

Silk-like polymers (SLP) are inspected after photoresist stripping at the post-passivation-etch stage. They mainly distribute on the scribe lines between the die chips, but partially generate from the bonding pads and stay on the passivation films. Their width is around 100 - 200 nm, but the length could be extended to several hundred micrometers. The SLP will act as a mask with respect to the following low-power CF₄ plasma treatment and leave the SLP-shaped replicas on the passivation films. They even remain on the bonding pads to affect the bonding performance. An O₂ plasma cleaning chemicals was found with the ability to successfully remove the SLP. The formation mechanism of the SLP will be investigated and the prevention methods also discussed in the study.

Citation Download Citation

Chung-Daw Young, Sen-Fu Chen, and Chia-Hsiang Chen "Generation mechanism and reduction methods of post-passivation-etch silklike polymers", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346243

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