Improvement in diffusion barrier properties of PECVD W-N thin film by low-energy BF2+ implantation

Dong Joon Kim; YongTae Kim; Young K. Park; Hyun Sang Sim; Jong-Wan Park

doi:10.1117/12.346932

27 April 1999 Improvement in diffusion barrier properties of PECVD W-N thin film by low-energy BF₂⁺ implantation

Dong Joon Kim, YongTae Kim, Young K. Park, Hyun Sang Sim, Jong-Wan Park

Proceedings Volume 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346932
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

The structural and electrical properties of BF₂⁺ implanted PECVD tungsten nitride thin film were investigated. After BF₂⁺ implantation with 40keV and 1 X 10¹⁷ B ions/cm², W-B⁺-N layer was formed at the surface region of W-N films. The ternary layer maintained the microcrystalline state and prevented nitrogen out-diffusion form W-N thin film after annealing at 800 degrees C for 30 min. The overall electrical resistivity of W-B⁺-N/W-N thin film is 200 (mu) (Omega) cm, which is higher than that of W-N thin film because of forming the ternary phase. BF₂⁺ implanted tungsten nitride thin film improved thermal stability against Cu diffusion more than W-N thin film.

Citation Download Citation

Dong Joon Kim, YongTae Kim, Young K. Park, Hyun Sang Sim, and Jong-Wan Park "Improvement in diffusion barrier properties of PECVD W-N thin film by low-energy BF₂⁺ implantation", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346932

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