Paper
22 November 1999 Raman-excited spin coherences for high-temperature spectral hole burning memories
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Abstract
The possibility of using Raman excited spin coherences to increase the operating temperature of spectral hole burning memories and processors is being explored experimentally. The approach is to store and/or process data using spin coherences excited by optical Raman transitions. This is motivated by the fact that spin coherence lifetimes are much less sensitive to temperature than optical coherence lifetimes. However, direct microwave excitation of spin coherences does not give a high storage density because of the large microwave wavelength. By using optical Raman fields to excite the spin coherences, full optical spatial resolution can be achieved. Initial experiments in Pr doped YSO demonstrated potential for higher temperature operation. Current experiments are concentrating on further increasing the operating temperature using this and other materials.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philip L. Hemmer, M. Selim Shahriar, Byoung S. Ham, and Myung K. Kim "Raman-excited spin coherences for high-temperature spectral hole burning memories", Proc. SPIE 3802, Advanced Optical Data Storage: Materials, Systems, and Interfaces to Computers, (22 November 1999); https://doi.org/10.1117/12.370236
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KEYWORDS
Raman spectroscopy

Hole burning spectroscopy

Coherence (optics)

Crystals

Laser crystals

Transparency

Laser beam diagnostics

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