Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

Marek Osinski; Petr Georgievich Eliseev; Jinhyun Lee; Vladimir A. Smagley; Tamoya Sugahara; Shiro Sakai

doi:10.1117/12.370346

12 November 1999 Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

Marek Osinski, Petr Georgievich Eliseev, Jinhyun Lee, Vladimir A. Smagley, Tamoya Sugahara, Shiro Sakai

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370346
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD are interpreted in terms of a band-tail model of inhomogeneously broadened radiative recombination. The anomalous temperature-induced blue spectral is shown to result from band-tail recombination under non-degenerate conditions. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimination method, with no apparent evidence of band tails in homoepitaxial structures, indicating their higher crystalline quality.

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Marek Osinski, Petr Georgievich Eliseev, Jinhyun Lee, Vladimir A. Smagley, Tamoya Sugahara, and Shiro Sakai "Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370346

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