Maskless Fabrication Using Focused Ion Beams

Kenji Gamo; Susumu Namba

doi:10.1117/12.935107

7 November 1983 Maskless Fabrication Using Focused Ion Beams

Kenji Gamo, Susumu Namba

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935107
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

Maskless patterning of materials using focused ion beams are important to simplify device processing and to develope full maskless processing. We have shown that a high speed maskless patterning can be done using ion beam assisted etching and ion beam modification techniques. In this paper, basic characteristics of various liquid metal alloy ion sources and a mass separatted focused ion beam system, and maskless patterning techniques for GaAs, Cr films and other materials are reported.

Citation Download Citation

Kenji Gamo and Susumu Namba "Maskless Fabrication Using Focused Ion Beams", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935107

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