Group-III nitride VCSEL structures grown by molecular beam epitaxy

HockMin Ng; Theodore D. Moustakas

doi:10.1117/12.391418

14 July 2000 Group-III nitride VCSEL structures grown by molecular beam epitaxy

HockMin Ng, Theodore D. Moustakas

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391418
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

III-nitride VCSEL structures designed for electron-beam pumping have been grown by molecular beam epitaxy (MBE). The structures consist of a sapphire substrate on which an AlN/GaN distributed Bragg reflector (DBR) with peak reflectance >99% at 402 nm is deposited. The active region consists of a 2-(lambda) cavity with 25 In_0.1Ga_0.9N/GaN multiquantum wells (MQWs) whose emission coincides with the high reflectance region of the DBR. The thicknesses of the InGaN wells and the GaN barriers are 35 angstrom and 75 angstrom respectively. The top reflector consists of a silver metallic mirror which prevents charging effects during electron-beam pumping. The structure was pumped from the top- side with a cw electron-beam using a modified cathodoluminescence (CL) system mounted on a scanning electron microscope chamber. Light output was collected from the polished sapphire substrate side. Measurements performed at 100 K showed intense emission at 407 nm with narrowing of the linewidth with increasing beam current. A narrow emission linewidth of 0.7 nm was observed indicating the onset of stimulated emission.

Citation Download Citation

HockMin Ng and Theodore D. Moustakas "Group-III nitride VCSEL structures grown by molecular beam epitaxy", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391418

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