Paper
29 March 2000 Selective-proton-bombarded buried stripe laser and its modulation response
Maobin Yi, Baijun Zhang, Daming Zhang, Wei Sun, Xiaojian Tian
Author Affiliations +
Abstract
Selective proton bombarded buried stripe lasers have been developed using the tungsten filaments as a mask to proton bombard the current-blocking area. High reliability has been shown in high temperature accelerated aging tests. For the selective proton bombarded buried crescent laser diodes, the output power of 150 mW, the small signal modulation bandwidth in excess of 11 GHz for the 250 micrometer cavity length and full area electrode, and the shortest gain switched laser pulses of 7 ps FWHM by combined DC and microwave current injection are achieved.
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Maobin Yi, Baijun Zhang, Daming Zhang, Wei Sun, and Xiaojian Tian "Selective-proton-bombarded buried stripe laser and its modulation response", Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); https://doi.org/10.1117/12.380537
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KEYWORDS
Semiconductor lasers

Modulation

Capacitance

Microwave radiation

Tungsten

Laser development

Liquid phase epitaxy

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