InAs/GaInSb strained layer superlattice as an infrared detector material: an overview

Jeffrey L. Johnson

doi:10.1117/12.382111

13 April 2000 InAs/GaInSb strained layer superlattice as an infrared detector material: an overview

Jeffrey L. Johnson

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382111
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The investigation of the InAs/Ga_1-xIn_xSb strained layer superlattice (SLS) has been largely motivated by the promise of overcoming limitations of current mature high-performance IR detectors, such as those using HgCdTe and extrinsic silicon. It also offers fundamentally superior performance over other newly emerging III-V bandgap- engineered materials such as QWIPs. The inherent properties of the InAs/GaInSb SLS have identified it as an attractive alternative for niche VLWIR applications requiring high performance under low backgrounds at operating temperatures > 40K. If this material system proves to meet the stringent demands of VLWIR applications, it will most certainly play a significant role as an alternative materials for photovoltaic focal pane arrays operating in the LWIR and MWIR regimes as well. This paper is an overview of SLS technology development, and focuses on critical development needs as seen from the perspective of the IR detector industry.

Citation Download Citation

Jeffrey L. Johnson "InAs/GaInSb strained layer superlattice as an infrared detector material: an overview", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382111

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