Reticle programmed defect size measurement using low-voltage SEM and pattern recognition techniques

Larry S. Zurbrick; Steve Khanna; Jay Lee; James J. Greed Jr.; Ellen R. Laird; Rene M. Blanquies

doi:10.1117/12.377119

3 February 2000 Reticle programmed defect size measurement using low-voltage SEM and pattern recognition techniques

Larry S. Zurbrick, Steve Khanna, Jay Lee, James J. Greed Jr., Ellen R. Laird, Rene M. Blanquies

Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377119
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany

Abstract

The use of programmed defect test reticles to characterize automatic defect inspection equipment has long been an established practice in the maskmaking industry. Measurement of the defect sizes on these programmed defect test masks is not necessary if one only desires to qualitatively investigate differences in system performance. However, more meaningful comparisons in inspection system performance require a calibrated programmed defect test mask. Historically, commercially available programmed defect test reticles have not had traceable or well-documented defect sizing methods nor was information regarding the precision of these measurements provided. This paper describes the methods used and results obtained from the work performed to address these issues. Using a low voltage scanning electron microscope as an image acquisition system, defect sizing is accomplished using automated pattern recognition software. The software reports defect size metrics such as maximum inscribed circle diameter and area. Measurement precision better than 30 nm has been demonstrated for the maximum inscribed circle method. The correlation of SEM based measurements to historical optical metrology measurements ia also discussed.

Citation Download Citation

Larry S. Zurbrick, Steve Khanna, Jay Lee, James J. Greed Jr., Ellen R. Laird, and Rene M. Blanquies "Reticle programmed defect size measurement using low-voltage SEM and pattern recognition techniques", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377119

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available