Simulation-based proximity correction in high-volume DRAM production

Werner Fischer; Ines Anke; Giorgio Schweeger; Joerg Thiele

doi:10.1117/12.389078

5 July 2000 Simulation-based proximity correction in high-volume DRAM production

Werner Fischer, Ines Anke, Giorgio Schweeger, Joerg Thiele

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389078
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Simulation-based optical proximity correction (OPC) is applied to print the gate level of a state-of-the-art, high- volume DRAM technology. Using 248 nm lithography, critical structures down to 170nm are printed.

Citation Download Citation

Werner Fischer, Ines Anke, Giorgio Schweeger, and Joerg Thiele "Simulation-based proximity correction in high-volume DRAM production", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389078

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