Paper
19 July 2000 EUV mask absorber characterization and selection
Pei-yang Yan, Guojing Zhang, Patrick Kofron, Jeffrey E. Powers, Mark Tran, Ted Liang, Alan R. Stivers, Fu-Chang Lo
Author Affiliations +
Abstract
In this paper, we will present our research work in EUVL mask absorber characterization and selection. The EUV mask patterning process development depends on the choice of EUVL mask absorber material, which has direct impact on the mask quality such as critical dimension (CD) control, and registration. EUVL mask absorber material selection consideration involves many aspects of material properties and processes. These include film absorption at EUV wavelength, film emissivity, film stress, mask CD and defect control, defect inspection contrast, absorber repair selectivity to the buffer layer, etc. The selection of the best candidate is non-trivial since no material is found to be superior in all aspects. In an effort of searching the best absorber materials and processes, we evaluated Al-Cu, Ti, TiN, Ta, TaN, and Cr absorbers. The comparison of material intrinsic properties and process properties allowed us to focus on the most promising absorbers and to further develop the corresponding processes to meet EUVL requirement.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei-yang Yan, Guojing Zhang, Patrick Kofron, Jeffrey E. Powers, Mark Tran, Ted Liang, Alan R. Stivers, and Fu-Chang Lo "EUV mask absorber characterization and selection", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392025
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Cited by 23 scholarly publications and 2 patents.
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KEYWORDS
Etching

Metals

Photomasks

Oxides

Inspection

Extreme ultraviolet lithography

Extreme ultraviolet

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