Proximity effect correction for reticle fabrication

Masao Sugiyama; Shinji Kubo; Koji Hiruta; Takayuki Iwamatsu; Tatsuya Fujisawa; Hiroaki Morimoto

doi:10.1117/12.392056

19 July 2000 Proximity effect correction for reticle fabrication

Masao Sugiyama, Shinji Kubo, Koji Hiruta, Takayuki Iwamatsu, Tatsuya Fujisawa, Hiroaki Morimoto

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392056
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

As the LSI pattern density increases, the minimum feature size on reticle decreases and the required dimensional accuracy becomes more severe. To write patterns for 130nm- node device, the proximity effect correction is essential for electron beam mask writing system to obtain enough CD accuracy. We optimized the proximity effect correction parameters in EB mask writer, and the evaluated results are presented.

Citation Download Citation

Masao Sugiyama, Shinji Kubo, Koji Hiruta, Takayuki Iwamatsu, Tatsuya Fujisawa, and Hiroaki Morimoto "Proximity effect correction for reticle fabrication", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392056

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available