Paper
25 February 2000 Carbon nitride coherently grown on Si (111) substrates by pulsed laser irradiation
G. Barucca, Guiseppe Majni, Paolo Mengucci, Gilberto Leggieri, Armando Luches, Maurizio Martino, Alessio Perrone
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Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378165
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Abstract
Carbon nitride films were deposited on Si substrates at room temperature by XeCl laser ablation of graphite targets in low pressure N2 atmosphere at the fluence of 12 J/cm2. The films have been submitted to x-ray diffraction and transmission electron microscopy investigations in order to study the structure of the films. Results showed that the samples are constituted of a continuous amorphous film inside which microcrystals are dispersed. A new CNx phase has been identified. This new phase has a triclinic crystallographic cell with lattice parameters a equals b equals 0.384 nm, c equals 0.438 +/- 0.007 nm, (alpha) equals 110 +/- 1 degrees, (beta) equals 105 +/- 1 degrees, and (gamma) equals 120 degrees. It coherently grows on the Si plane with the following orientation relationships: (001)CNx (parallel) (111)Si; (100)CNx (parallel) (1-10)Si and (010)CNx (parallel) (01-1)Si.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Barucca, Guiseppe Majni, Paolo Mengucci, Gilberto Leggieri, Armando Luches, Maurizio Martino, and Alessio Perrone "Carbon nitride coherently grown on Si (111) substrates by pulsed laser irradiation", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378165
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KEYWORDS
Silicon

Crystals

Transmission electron microscopy

Carbon

Diffraction

Protactinium

Silicon carbide

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