Dielectric function of GaN: model calculations

Aleksandra B. Djurisic; E. Herbert Li

doi:10.1117/12.392178

11 July 2000 Dielectric function of GaN: model calculations

Aleksandra B. Djurisic, E. Herbert Li

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392178
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

In this work we have modeled the optical functions of hexagonal GaN (corresponding to E(perpendicular)c) in the range from 1 eV to 10 eV using a modified critical points model. The difference between the model employed and the standard critical points model is that the exponent m is an adjustable parameter, and does not have fixed value depending on the type of critical point. Excellent agreement with the experimental data has been achieved over the entire investigated spectral range. Obtained relative rms errors equal 0.6% for the real part, and 2.0% for the imaginary part of the index refraction.

Citation Download Citation

Aleksandra B. Djurisic and E. Herbert Li "Dielectric function of GaN: model calculations", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392178

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