Paper
11 July 2000 Etch of gallium nitride and other III-IV materials using a novel high-density plasma configuration
TsungNane Kuo, JuiHung Yeh, Hong-Ji Lee, ChingAn Chen, GuangKai Jeng, ChingPiao Lin
Author Affiliations +
Abstract
Implementation of a novel high-density plasma configuration has led to high etch rates of various opto-electronic device structures. The etch rate for multiple quantum well GaN/GaInN structures exceeds 7500A/min, and that for AlGaInP/GaInP structure is over 4.5 micron/min with near-vertical profile. Discussion will cover the analysis of the etch-rate, micro- morphology, etch-profile and selectivity with respect to the influence by various process parameters. Deep-etch for over 20 microns with photoresist as the protection layer has been achieved, which resulted in nearly 90-degree profile.
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TsungNane Kuo, JuiHung Yeh, Hong-Ji Lee, ChingAn Chen, GuangKai Jeng, and ChingPiao Lin "Etch of gallium nitride and other III-IV materials using a novel high-density plasma configuration", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392123
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KEYWORDS
Etching

Plasma

Gallium nitride

Chemistry

Plasma etching

Vertical cavity surface emitting lasers

Indium

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