Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate

W. F. Chan; Zhe Chuan Feng; Soo-Jin Chua; Jianyi Lin

doi:10.1117/12.392142

11 July 2000 Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate

W. F. Chan, Zhe Chuan Feng, Soo-Jin Chua, Jianyi Lin

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392142
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

Room Temperature (RT) Infrared (IR) Reflectance spectra are studied both theoretically and experimentally on 3C-SiC films grown on silicon (100) substrate by low pressure chemical vapor deposition (LPCVD). By the use of transfer matrix method, the spectral features influenced by film thickness, phonon-damping constant and free carrier concentration are systematically studied. Comparisons of reflectance spectra are made between experimental spectra and those of ideal samples. A modified effective medium model with consideration of the presence of interfacial layer is introduced to interpret some unusual features. Although some of our results are qualitative, careful analysis of reflectance spectra does provide valuable information about film quality.

Citation Download Citation

W. F. Chan, Zhe Chuan Feng, Soo-Jin Chua, and Jianyi Lin "Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392142

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