Low-threshold current densities of 1.5-um wavelength (110) GaInAs(P) QW lasers along [001] direction

Kunishige Oe; Rajaram J. Bhat; Mineo Ueki; Manabu Mitsuhara

doi:10.1117/12.392136

11 July 2000 Low-threshold current densities of 1.5-μm wavelength (110) GaInAs(P) QW lasers along [001] direction

Kunishige Oe, Rajaram J. Bhat, Mineo Ueki, Manabu Mitsuhara

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392136
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

(110)-oriented GaInAs(P) quantum well lasers along [001] direction have been fabricated to investigate growth direction effects of the QW structure on laser performance. The structures were grown by two methods; MOVPE and MOMBE. Threshold current densities of the QW lasers were investigated for wide stripes aligned in the [001] and [110] directions from the same wafer. As there is no cleaved facets for lasers along [001] direction, the mirror facets were formed parallel to the (001) face by reactive-ion- etching (RIE) using Bbr³ gas. Strong in-lane anisotropic lasing characteristics in the lasers made of the (110)- oriented QW structures were observed between the [001] and [110]cavity directions. This strong anisotrophy in J_th is believed to come from the stronger oscillator strength in the [001] direction. Fairly low threshold current densities of less than 0.6 KA/cm² were obtained for the lasers with cavities along [001] direction in spite of the lower reflectivity of the RIE-etched mirror surface. The result in this research shows the expected advantage of the (110) lasers along the [001] cavity direction and suggests an advantage of the (110) QW structure in the application for long wavelength surface emitting lasers.

Citation Download Citation

Kunishige Oe, Rajaram J. Bhat, Mineo Ueki, and Manabu Mitsuhara "Low-threshold current densities of 1.5-μm wavelength (110) GaInAs(P) QW lasers along [001] direction", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392136

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KEYWORDS

Quantum wells

Semiconducting wafers

Laser damage threshold

Mirrors

Anisotropy

Laser applications

Reactive ion etching

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