Adiabatic mode expansion laser diodes fabricated by selective area growth

Jun Ping Zhang; Xiaojun Wang; Jem Yu Fan; Qiangsheng Xiang; Fow-Sen Choa

doi:10.1117/12.406316

15 December 2000 Adiabatic mode expansion laser diodes fabricated by selective area growth

Jun Ping Zhang, Xiaojun Wang, Jem Yu Fan, Qiangsheng Xiang, Fow-Sen Choa

Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406316
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

Adiabatic mode expansion laser diodes (AME-LDs) with small beam divergence fabricated by selective area growth (SAG) are described. The AME-LDs have low thresholds of around 12 mA. The lateral and vertical far field angles (FWHM) are reduced from 25° and 300 to 8° and 14°, respectively. The measured alignment tolerance to a cleaved single mode fiber (SMF) is 3 pm.

Citation Download Citation

Jun Ping Zhang, Xiaojun Wang, Jem Yu Fan, Qiangsheng Xiang, and Fow-Sen Choa "Adiabatic mode expansion laser diodes fabricated by selective area growth", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406316

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