Selective-area-growth materials for widely tunable semiconductor lasers

Jun Ping Zhang; Xiangjun Zhao; Xiaojun Wang; Fow-Sen Choa; Jie Lin; Gary M. Carter

doi:10.1117/12.406317

15 December 2000 Selective area growth materials for widely tunable semiconductor lasers

Jun Ping Zhang, Xiangjun Zhao, Xiaojun Wang, Fow-Sen Choa, Jie Lin, Gary M. Carter

Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406317
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

We report preliminary results ofwidely tunable semiconductor laser materials using selective area growth techniques. This material has very broad gain profiles ofmore than 250 nm and is promising to be used as widely tunable laser diodes for future broadband wavelength division multiplexed (WDM) access networks.

Citation Download Citation

Jun Ping Zhang, Xiangjun Zhao, Xiaojun Wang, Fow-Sen Choa, Jie Lin, and Gary M. Carter "Selective area growth materials for widely tunable semiconductor lasers", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406317

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