Conduction Pronerties Of Annealed (Hg[sub].8[/sub]Cd[sub].2[/sub])Te Thin Films On Silicon Substrates Prepared By Triode-Sputtering With Substrate Bias

Ro y H. Cornely; Lawrence Suchow; Robert Bourne; Michael Mulligan; Riaz Haq; Chia-Jen Wu

doi:10.1117/12.935731

30 November 1983 Conduction Pronerties Of Annealed (Hg_.8Cd_.2)Te Thin Films On Silicon Substrates Prepared By Triode-Sputtering With Substrate Bias

Ro y H. Cornely, Lawrence Suchow, Robert Bourne, Michael Mulligan, Riaz Haq, Chia-Jen Wu

Author Affiliations +

Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935731
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

A large number of (Hg_.8Cd_.2)Te films, about ten microns thick, were prepared on low-cost Si substrates by r.f..triode-sputtering in a Hg atmosphere. The sensitivity of the film conduction properties to small changes in snutter-deposition parameters (particularly Hg sputtering gas pressure and substrate dc bias and temnerature) and to post deposition annealina parameters was studied by Vanderpauw Hall effect measurements variable tempera-ture and magnetic field. Wavelength dispersive electron-probe microanalysis and optical absorption analysis were used to measure the film composition which under the proper souttering conditions matched the nominal composition value of the pressed-powder target in the 0.2-0.27 x value range. Substrate bias to remove impurities depositing during the sputter-ing process was found to be effective for obtaining n-type films with carrier concentrations as low as 10¹⁵ cm^-3 at 1000^oK. Although the electron mobilities were only about 10% of bulk values, the experimental results indicate that considerable improvement can be obtained by further fine tuning of the deposiiton and annealing parameters.

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Ro y H. Cornely, Lawrence Suchow, Robert Bourne, Michael Mulligan, Riaz Haq, and Chia-Jen Wu "Conduction Pronerties Of Annealed (Hg_.8Cd_.2)Te Thin Films On Silicon Substrates Prepared By Triode-Sputtering With Substrate Bias", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935731

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