Method of powder metallurgy for compounds A11BV1

Alexander I. Polyakov

doi:10.1117/12.422168

18 December 2000 Method of powder metallurgy for compounds A¹¹B^V1

Alexander I. Polyakov

Proceedings Volume 4111, Terahertz and Gigahertz Electronics and Photonics II; (2000) https://doi.org/10.1117/12.422168
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

The method of powder metallurgy for CdTe gives high possibilities for production of new type material structure and detector with picosecond time resolution, high radiation resistivity and electrical breakdown voltage. The method is simple, can be used for different semiconductors. The method forms a semiconductor structure with partly normalized destroyed grain boundary between powder particles which is characterized by extremely high concentration of deep level and traps. The heating and fast freezing are the main operation of this technological process. This method changes electro physical properties of monocrystalline CdTe and gives the new perspectives for development of semiconductor physics and technology.

Citation Download Citation

Alexander I. Polyakov "Method of powder metallurgy for compounds A¹¹B^V1", Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); https://doi.org/10.1117/12.422168

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