Low-k etch/ash for copper dual damascene

Tomoki Suemasa; Masaru Nishino; Kouichiro Inazawa; Vaidyanathan Balasubramanian; Eiichi Nishimura

doi:10.1117/12.395739

18 August 2000 Low-k etch/ash for copper dual damascene

Tomoki Suemasa, Masaru Nishino, Kouichiro Inazawa, Vaidyanathan Balasubramanian, Eiichi Nishimura

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395739
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

We report the recent progress and issues related to low-k dielectric etch using TEL Unity II tools. Various low-films have been evaluated in terms of etch and post-etch ash. Inorganic and Organo-Silicate Glass films can be etched by modified oxide etch chemistry. In contrast, organic films are etched by non- fluorocarbon chemistry. Although etching the low-k film sis not so difficult, the concern in the damage caused by etch or ash. FTIR, XPS, Secondary Ion Mass Spectroscopy analysis and capacitance measurement suggest that little impact has been induced on the films during etch and properly controlled in-situ ash. Finally, we introduce the dual damascene scheme with spin-on bi-layer hardmask with SiLK.

Citation Download Citation

Tomoki Suemasa, Masaru Nishino, Kouichiro Inazawa, Vaidyanathan Balasubramanian, and Eiichi Nishimura "Low-k etch/ash for copper dual damascene", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395739

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