Paper
22 January 2001 Evaluation of loading effect of NLD dry etching: II
Tatsuya Fujisawa, Takayuki Iwamatsu, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, Yoichi Takehana
Author Affiliations +
Abstract
The dry etching process by using NLD (Neutral Loop Discharge Plasma) has been evaluated. The loading effect was measured applying the CAR (Chemically Amplified Resist) negative resist process in the low pressure etching condition, where an excellent CD (Critical Dimension) uniformity was obtained.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuya Fujisawa, Takayuki Iwamatsu, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, and Yoichi Takehana "Evaluation of loading effect of NLD dry etching: II", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410736
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Dry etching

Antennas

Critical dimension metrology

Photoresist processing

Plasma

Magnetism

RELATED CONTENT

Dry etching for silylated resist development
Proceedings of SPIE (March 01 1991)
Proximity effects for rinse, dry, and etch parameters
Proceedings of SPIE (August 28 2003)
Improvement of NLD mask dry etching system
Proceedings of SPIE (September 05 2001)
In situ selectivity monitor for dry etch of photomasks
Proceedings of SPIE (May 11 2009)
Advanced NLD mask dry etching system for 90 nm node...
Proceedings of SPIE (August 28 2003)
Dry etching technology of Cr films to produce fine pattern...
Proceedings of SPIE (December 30 1999)

Back to Top