Thin film epitaxy on Si for microelectronics

Jing Zhang; Eng Soon Tok; Guy Breton; Nick J. Woods

doi:10.1117/12.405367

24 October 2000 Thin film epitaxy on Si for microelectronics

Jing Zhang, Eng Soon Tok, Guy Breton, Nick J. Woods

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405367
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

Thin film epitaxy is becoming an essential tool in the microelectronic manufacturing process. This paper discusses some recent advances of epitaxial growth techniques relevant to microelectronic industry and examples where epitaxy has allowed realization of device concepts such as Si/SiGe heterojunction MOS devices. Deposition form gas phase precursors has become techniques of choice as it allows growth of structures requiring selective and non-selective growth over oxide patterned Si surfaces. This has enabled the fabrication of self-aligned heterojunction bipolar transistor structures. With the concept of 'virtual substrate', the band alignment in heterojunctions of Si/SiGe is controlled through manipulation of strain in the epitaxial films. Critical material parameters such as composition and dopant profiles are strongly influenced by the choice of epitaxial techniques and growth conditions. Knowledge obtained through studies of growth dynamics/kinetics using surface sensitive techniques has provided much better insight into the process of surface segregation which limits out ability to control of composition and dopant profiles. This has lead to optimization of growth conditions aimed at producing sharper heterojunctions and spatially localized doping profiles. Epitaxy has also been used to incorporate other elements into the Si/SiGe material system such as carbon. This iso electronic impurity allows trapping of interstitial boron thus reducing the transient enhanced diffusion of this dopant. Other materials such as strontium titanate used for high-k gate dielectric has been deposited on Si illustrating the potential application of epitaxy in the industry.

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Jing Zhang, Eng Soon Tok, Guy Breton, and Nick J. Woods "Thin film epitaxy on Si for microelectronics", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405367

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KEYWORDS

Silicon

Epitaxy

Heterojunctions

Arsenic

Germanium

Microelectronics

Diffusion

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